Gate Driver ISL6612BIRZ product image

ISL6612BIRZ

  • Description:IC GATE DRVR HALF-BRIDGE 10DFN
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:e0fecf389ac6 Category: Brand:

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ISL6612BIRZ is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 10DFN. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for ISL6612BIRZ

  • Description:IC GATE DRVR HALF-BRIDGE 10DFN
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:7V ~ 13.2V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):1.25A, 2A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):26ns, 18ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:10-VFDFN Exposed Pad
  • Supplier Device Package:10-DFN (3x3)
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):36 V

Gate Driver datasheet and documents for ISL6612BIRZ

ISL6612BIRZ

Gate Driver Overview

The ISL6612BIRZ is a half-bridge gate driver IC manufactured by Renesas Electronics Corporation. It features two independent drivers configured for synchronous operation, designed to control N-channel MOSFETs. The device supports a supply voltage range of 7V to 13.2V and withstands a maximum high-side bootstrap voltage of 36V. Key electrical parameters include a peak output current of 1.25A source and 2A sink, with typical rise and fall times of 26ns and 18ns respectively. Propagation delay is maximized at 10ns. It operates within a junction temperature range of -40°C to +125°C and is housed in a 10-VFDFN package with an exposed pad.

Gate Driver Feature Summary

  • Synchronous half-bridge configuration optimized for driving N-channel power MOSFETs
  • Non-inverting input logic interface for straightforward signal integration
  • Integrated bootstrap support enabling high-side switching up to 36V
  • Exposed thermal pad design in DFN package for enhanced heat dissipation

Gate Driver Applications

  • Synchronous buck converter circuits
  • High-frequency DC-DC power conversion systems
  • Industrial motor drive gate control stages

Gate Driver Procurement Notes

Verify component authenticity through authorized channels as the part status is End-of-Life. Confirm package integrity and moisture sensitivity level handling procedures prior to assembly. Cross-reference datasheet revisions to ensure compatibility with existing design specifications and regulatory compliance requirements such as RoHS standards.

Gate Driver Selection Notes

Select this component for applications requiring precise timing control in synchronous rectification topologies. The low propagation delay and matched rise/fall times minimize cross-conduction risks. Ensure the PCB layout accommodates the 10-DFN footprint and provides adequate thermal relief for the exposed pad to maintain junction temperatures within safe operating limits during continuous load conditions.

Gate Driver Part Context

The ISL6612BIRZ belongs to the ISL6612 series of high-performance gate drivers from Renesas. This series is engineered for efficient power management solutions, offering robust driving capabilities for power switches. The specific BIRZ variant utilizes a compact leadless package suitable for space-constrained modern electronic designs requiring reliable high-speed switching performance.

Gate Driver Replacement Considerations

  • ISL6612CBZAR5214
  • ISL6612ACBZ-T
  • ISL6612CRZ-T

Gate Driver FAQ

What is the maximum high-side voltage capability?

The device supports a maximum high-side bootstrap voltage of 36V.

Does the ISL6612BIRZ have inverting or non-inverting inputs?

It features non-inverting input logic.

ISL6612BIRZISL6612BIRZ

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