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ISL6613AEIBZ is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.
The ISL6613AEIBZ is a synchronous buck MOSFET high-voltage gate driver manufactured by Renesas Electronics Corporation. It features two independent drivers in an 8-lead SOIC package with an exposed pad. The device supports a maximum supply voltage of 13.2 V and delivers a peak output current of 3 A. Typical rise and fall times are 26 ns and 18 ns, respectively, with a maximum propagation delay of 10 ns. It operates within a temperature range of -40°C to +85°C.
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance details and moisture sensitivity level prior to assembly. Check for product change notifications regarding packaging or labeling updates. Ensure storage conditions meet specified humidity requirements to prevent damage before soldering.
Select this component for applications requiring a dedicated half-bridge driver with adjustable gate drive voltage. Consider the 3A sink current capability and fast switching speeds for efficient power conversion. Evaluate thermal performance given the 2W power dissipation rating and exposed pad package for adequate heat sinking.
This part belongs to the ISL6613A series of high-voltage gate drivers designed for synchronous rectification. It complements other variants like the ISL6613BCBZ which differs in operating temperature range and package width. The series targets efficient power management solutions requiring precise control of MOSFET switching transitions.
Public confirmed substitute part numbers are not available in the provided documentation.
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