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Product Detailed Parameters
- Description：IGBT 3000V 30A TO-247AD
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 12A
- Power - Max：160 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：62 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.4 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXBH12N300 is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It integrates an IGBT and an anti-parallel diode in a single package to reduce conduction losses. The device features low gate drive requirements and high power density, making it suitable for demanding power electronics applications.
Feature Summary
- High blocking voltage capability with integrated anti-parallel diode
- Low conduction losses due to monolithic bipolar MOS structure
- Reduced gate drive requirement for simplified circuit design
- High power density in international standard packages
Applications
- Switched-mode and resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- Laser generators
- Capacitor discharge circuits
- AC switches
Procurement Notes
Verify the manufacturer datasheet for specific electrical limits and thermal characteristics before integration. Confirm package compatibility and pinout alignment with existing PCB footprints. Ensure gate drive voltage specifications match the component's maximum ratings to prevent damage during operation.
Selection Notes
Select this component for applications requiring high voltage isolation with integrated freewheeling functionality. The monolithic design reduces component count compared to discrete IGBT-diode pairs. Evaluate thermal management needs based on the specified power density and package type for reliable long-term performance.
Part Context
This part belongs to the BIMOSFET family from IXYS, combining bipolar and MOS technologies. It is designed for medium to high-power switching applications where efficiency and compactness are critical. The technology leverages advanced semiconductor processes to achieve superior switching characteristics.
Replacement Considerations
Check for direct substitutes within the IXYS BIMOSFET lineup or equivalent high-voltage IGBT modules from other manufacturers. Verify that replacement parts meet or exceed the original voltage, current, and thermal specifications.
