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The IXBH14N300HV is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the Very High Voltage series, manufactured by IXYS. It utilizes a TO-247HV-3 package for through-hole mounting. Key electrical specifications include a collector-emitter maximum voltage of 3 kV and a continuous collector current of 38 A at 25°C. The device features a collector-emitter saturation voltage of 2.2 V and a maximum power dissipation of 200 W. It operates within a temperature range of -55°C to +150°C.
Verify the specific manufacturing date code and lot traceability upon receipt to ensure compliance with project reliability standards. Confirm that the TO-247HV-3 package dimensions match the intended PCB footprint and thermal management design. Check for any RoHS or REACH compliance documentation provided by the manufacturer for regulatory adherence.
Select this component when a 3 kV blocking voltage is required alongside moderate current handling capabilities. The TO-247HV-3 package offers a balance between thermal dissipation and mechanical stability for through-hole assembly. Consider the 2.2 V saturation voltage for efficiency calculations in low-to-medium frequency switching applications.
This IGBT belongs to IXYS's Very High Voltage product line, designed for robust performance in high-stress environments. The part number indicates a 3000V rating and a specific current class within the IXBH series, which typically denotes high-voltage discrete transistors optimized for industrial power electronics.
Direct substitutes must match the 3 kV voltage rating, TO-247HV-3 package, and similar current and saturation voltage specifications. Verify pinout compatibility and thermal resistance values before implementation.
The maximum collector-emitter voltage (VCEO) is 3 kV.
No, it is designed for through-hole mounting using the TO-247HV-3 package.
The continuous collector current is rated at 38 A at an ambient temperature of 25°C.