IXBH20N360HV

$89.28

Description：IGBT 3600V 70A TO-247HV
Series：BIMOSFET™

SKU:f0cbf5b2f5cc Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 3600V 70A TO-247HV
Series：BIMOSFET™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：3600 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：220 A
Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 20A
Power - Max：430 W
Switching Energy：15.5mJ (on), 4.3mJ (off)
Input Type：Standard
Gate Charge：110 nC
Td (on/off) @ 25°C：18ns/238ns
Test Condition：1500V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：1.7 µs
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3 Variant
Supplier Device Package：TO-247HV
Grade：-
Qualification：-

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IXBH20N360HV

Overview

The IXYS IXBH20N360HV is a high-voltage, high-frequency BiMOSFET monolithic bipolar MOS transistor. It features a silicon chip on a direct-copper bond (DCB) substrate with an isolated mounting surface providing 4000V electrical isolation. The device supports high blocking voltage and high-frequency operation while maintaining a low gate drive requirement and high power density.

Feature Summary

Utilizes silicon chip on direct-copper bond substrate for thermal efficiency
Provides isolated mounting surface with 4000V electrical isolation
Designed for high blocking voltage and high-frequency operation
Features low gate drive requirement and high power density

Applications

Switch-mode and resonant-mode power supplies
Uninterruptible power supplies (UPS)
Laser generators
Capacitor discharge circuits
AC switches

Procurement Notes

Verify the specific manufacturer datasheet to confirm current production status and detailed electrical parameters. Ensure the selected component matches the required voltage and frequency specifications for the intended application. Check for any RoHS or REACH compliance requirements relevant to the deployment region.

Selection Notes

Select this component when high voltage isolation and high-frequency switching are critical. The DCB substrate offers advantages in thermal management compared to standard packages. Consider the low gate drive requirement for driver circuit compatibility. Evaluate the power density benefits against physical space constraints in the design.

Part Context

This part belongs to the BiMOSFET family from IXYS, combining MOS input characteristics with bipolar output performance. It is designed for applications requiring robust high-voltage handling and fast switching speeds. The technology leverages advanced substrate bonding for improved reliability and thermal conductivity in demanding power electronics environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and parameter compatibility before considering alternative manufacturers.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.