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Product Detailed Parameters
- Description：IGBT 1600V 9A TO-247AD
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1600 V
- Current - Collector (Ic) (Max)：9:00 AM
- Current - Collector Pulsed (Icm)：10:00 AM
- Vce(on) (Max) @ Vge, Ic：7V @ 15V, 5A
- Power - Max：100 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：34 nC
- Td (on/off) @ 25°C：-
- Test Condition：960V, 5A, 27Ohm, 10V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXBH9N160G is a single Insulated Gate Bipolar Transistor (IGBT) belonging to the BIMOSFET series. It features a silicon construction with a maximum collector-emitter voltage of 1.6 kV and a continuous collector current rating of 7 A. The device utilizes an ISOPLUS i4-PAC-3 surface-mount package, designed for high-voltage switching applications. Key electrical parameters include a collector-emitter saturation voltage of 4.9 V and a gate-emitter voltage range of -20 V to +20 V. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- High blocking voltage capability up to 1.6 kV for robust performance in demanding power environments.
- Integrated anti-parallel diode functionality within the single IGBT configuration.
- Surface-mount design utilizing the ISOPLUS i4-PAC-3 package for efficient PCB integration.
Applications
- Switch-mode power supplies
- Resonant mode power converters
- Uninterruptible power systems (UPS)
- Capacitor discharge circuits
Procurement Notes
Verify component authenticity through authorized channels due to potential supply chain variations. Confirm RoHS compliance status via official documentation before integration. Check for obsolescence notices as availability may be restricted. Ensure storage conditions meet semiconductor handling standards to prevent degradation prior to assembly.
Selection Notes
Select this component for designs requiring high-voltage isolation in compact surface-mount layouts. Evaluate thermal management requirements given the specific saturation voltage characteristics. Compare against alternative packages if board space constraints differ from the ISOPLUS form factor. Verify gate drive compatibility with the specified voltage limits.
Part Context
This device is part of the IXYS BIMOSFET family, which combines IGBT and diode technologies. The manufacturer specializes in power semiconductors for industrial and automotive sectors. This specific model targets applications needing reliable high-voltage switching in a standardized SMD footprint.
Replacement Considerations
Cross-reference with IXBF9N160G for similar specifications within the same product line. Consult official substitution guides for pin-compatible alternatives if sourcing is limited.
FAQ
What is the maximum operating junction temperature?
The maximum operating temperature is +150 °C.
Does the device include an integrated diode?
Yes, the component features an integrated anti-parallel diode.
What is the recommended gate-emitter voltage range?
The gate-emitter voltage should remain between -20 V and +20 V.
