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Product Detailed Parameters
- Description：IGBT MOD 1700V 42A 312W SOT227B
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：6V @ 15V, 21A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：42 A
- Power - Max：312 W
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：3.5 nF @ 25 V
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Overview
The IXBN42N170A is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS BIMOSFET series. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current (Ic) of 42 A. The device exhibits a collector-emitter saturation voltage of 6 V at rated conditions. It is housed in a SOT-227B-4 package designed for screw mount installation. The component supports a power dissipation (Pd) of 313 W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High-voltage capability with 1.7 kV blocking voltage rating
- Robust thermal performance supporting 313 W power dissipation
- Screw mount configuration for secure mechanical attachment
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging variations. Ensure the procurement channel provides valid traceability documentation. Confirm compliance requirements such as RoHS status directly from the latest technical release before finalizing orders.
Selection Notes
Select this component when a high-voltage, high-current single IGBT is required for screw-mount applications. The 1.7 kV rating suits medium-voltage industrial systems. Evaluate the 6 V saturation voltage against system efficiency targets. Verify that the SOT-227B-4 package dimensions align with the intended heatsink and chassis design constraints.
Part Context
This part belongs to the IXYS BIMOSFET family of discrete IGBTs. It shares the 1.7 kV voltage class with other models like the IXGT16N170A but differs significantly in current handling and package type. The BIMOSFET designation indicates a specific internal cell structure optimized for high-power switching applications.
Replacement Considerations
Direct pin-compatible replacements are not explicitly confirmed in public data. Substitution requires matching the 1.7 kV VCEO, 42 A Ic, and SOT-227B-4 package. Verify thermal resistance and gate charge parameters carefully.
