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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:IXYS
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 35V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):8ns, 8ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The IXDF402SI is a dual low-side ultrafast MOSFET driver manufactured by IXYS. It operates within a supply voltage range of 4.5 V to 35 V and draws a typical supply current of 3 mA. The device provides independent inverting and non-inverting outputs with peak source and sink currents of 2 A each. It features fast switching characteristics, including a rise time of 10 ns and a fall time of 9 ns. Packaged in an 8-SOIC format, it is designed for efficient driving of power MOSFETs in high-frequency applications.
Feature Summary
- Dual-channel architecture providing independent inverting and non-inverting output signals for flexible circuit configuration.
- Ultrafast switching performance with nanosecond-level rise and fall times to minimize transition losses.
- High peak drive capability delivering 2 A source and sink currents for rapid MOSFET gate charging and discharging.
Applications
- High-frequency DC-DC converter topologies
- Motor control systems requiring precise switching timing
- Inverter circuits utilizing low-side power MOSFETs
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct package type and temperature rating. Confirm that the component meets required RoHS compliance standards for your target market. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this component when dual isolated or referenced low-side drive signals are required with minimal propagation delay. Ensure the application voltage does not exceed the 35 V maximum supply limit. Consider the 8-SOIC thermal characteristics for PCB layout planning to maintain reliable operation under continuous load conditions.
Part Context
This device belongs to IXYS' portfolio of power management integrated circuits focused on gate drive solutions. It complements the company's broader range of power semiconductors by providing the necessary control interface for efficient switching of external power devices in various industrial and consumer electronics applications.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout compatibility and electrical specifications to avoid redesigning the host circuit board.
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