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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DIP
- Series:-
- Mfr:IXYS
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 30V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):7.5ns, 6.5ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-DIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The IXDF502PI is a dual low-side ultrafast MOSFET gate driver manufactured by IXYS. It provides two independent output channels with 2 A peak drive current capability. The device operates within a supply voltage range of 4.5 V to 35 V and supports both inverting and non-inverting configurations. Key timing parameters include a rise time of 16 ns and a fall time of 14 ns. It is housed in an 8-pin DIP package and functions reliably across an operating temperature range of -40°C to +125°C.
Feature Summary
- Dual-channel architecture providing independent control for multiple power switches
- Ultrafast switching performance optimized for high-frequency operation
- Flexible signal configuration supporting both inverting and non-inverting logic inputs
Applications
- Driving IGBT gates in industrial motor drives
- Power management circuits requiring fast switching speeds
- High-reliability power conversion systems
Procurement Notes
Verify the specific manufacturer datasheet for the IXDF502PI to confirm pinout compatibility and electrical limits before integration. Ensure that the driving circuitry adheres to the specified input voltage thresholds and that thermal management solutions are adequate for the expected duty cycle and ambient conditions.
Selection Notes
Select this component when a dual low-side driver with ultrafast transition times is required. It is suitable for applications needing independent control of two switches without isolation. Consider the 8-DIP package constraint for through-hole assembly requirements and verify that the 2 A output current meets the gate charge demands of the target MOSFETs or IGBTs.
Part Context
This part belongs to the IXD_602 series of gate drivers from IXYS Integrated Circuits. It is designed as a robust solution for driving power semiconductors in demanding environments. The device utilizes silicon technology and is compliant with RoHS standards, ensuring suitability for modern electronic manufacturing processes.
Replacement Considerations
The IXDN502PI is a documented substitute offering similar dual low-side functionality. Verify pin compatibility and ensure that any differences in rise/fall times or drive strength do not impact the target application's switching performance.
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