IXDF502SIA

IXDF502SIA

  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:IXYS
  • Package:Tube

SKU:960bbda6442c Category: Brand:

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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:4.5V ~ 30V
  • Logic Voltage - VIL, VIH:0.8V, 3V
  • Current - Peak Output (Source, Sink):2A, 2A
  • Input Type:Inverting, Non-Inverting
  • Rise / Fall Time (Typ):7.5ns, 6.5ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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IXDF502SIA

Overview

The IXDF502SIA is a dual low-side ultrafast MOSFET driver manufactured by IXYS Corporation. It provides independent control for two N-channel power MOSFETs or IGBTs. The device operates with a supply voltage range of 4.5 V to 30 V and delivers a peak output current of 2 A. It features fast propagation delays and matched rise/fall times, ensuring precise switching control in high-frequency applications.

Feature Summary

  • Dual channel architecture for independent low-side gate drive control
  • Ultrafast switching characteristics with matched rise and fall times
  • Robust 2 A source/sink output current capability
  • Wide operating supply voltage range supporting various logic levels

Applications

  • High-frequency DC-DC converter topologies
  • Motor drive circuits requiring precise low-side switching
  • Industrial power conversion systems
  • Inverter bridge legs using N-channel MOSFETs or IGBTs

Procurement Notes

Verify the specific suffix 'SIA' indicates the SOIC-8 package variant when sourcing. Confirm RoHS compliance status as manufacturing sources may vary. Ensure the supplier provides official datasheets from IXYS or Littelfuse to validate electrical parameters against the original specification sheet before finalizing procurement orders.

Selection Notes

Select this component when dual low-side driving is required without integrated high-side functionality. The 2 A output current suits medium-power MOSFETs. Consider thermal performance within the SOIC-8 package for continuous operation. Verify input logic compatibility with TTL or CMOS standards to ensure proper signal interfacing in the target circuit design.

Part Context

This part belongs to the IXYS IXDF series of ultrafast MOSFET drivers. It complements higher-current variants like the IXDD509 and lower-drive versions within the same family. The series emphasizes speed and matching between channels for balanced switching performance in power electronics applications.

Replacement Considerations

Direct substitutes include other dual low-side drivers from the IXYS portfolio such as the IXDN504SIA for increased current drive. Cross-reference pinouts and supply voltage ranges carefully when evaluating alternatives from different manufacturers to ensure functional compatibility.

IXDF502SIAIXDF502SIA

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