IXDF504D1T/R

IXDF504D1T/R

$0.88
  • Description:IC GATE DRVR LOW-SIDE 6DFN
  • Series:-
  • Mfr:IXYS
  • Package:Tape & Reel (TR)

SKU:3c07082ab922 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE 6DFN
  • Series:-
  • Mfr:IXYS
  • Package:Tape & Reel (TR)
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:4.5V ~ 30V
  • Logic Voltage - VIL, VIH:0.8V, 3V
  • Current - Peak Output (Source, Sink):4A, 4A
  • Input Type:Inverting, Non-Inverting
  • Rise / Fall Time (Typ):9ns, 8ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VDFN Exposed Pad
  • Supplier Device Package:6-DFN (4x5)
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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IXDF504D1T/R

Overview

The IXDF504D1T/R is a dual low-side ultrafast MOSFET driver manufactured by IXYS. It operates with a supply voltage range of 10 V to 20 V and delivers peak output currents of 4 A source and 6 A sink. The device features independent inputs for non-inverting and inverting control, ensuring precise switching timing. Key electrical parameters include propagation delays of 75 ns and pulse width distortion of 30 ns. It is housed in a compact 6-DFN package measuring 4x5 mm, designed for high-density power electronics applications requiring fast and reliable gate drive signals.

Feature Summary

  • Dual channel architecture providing independent non-inverting and inverting outputs for flexible control configurations
  • Ultrafast switching performance with 75 ns propagation delay and 30 ns pulse width distortion for minimal signal skew
  • High current drive capability delivering 4 A source and 6 A sink peak currents to rapidly charge and discharge MOSFET gates

Applications

  • Motor drive systems requiring precise phase control
  • DC-DC converter topologies needing isolated or non-isolated gate driving
  • Inverter circuits in industrial automation equipment

Procurement Notes

Verify the specific suffix T/R indicates tape and reel packaging when ordering. Confirm the 6-DFN (4x5 mm) footprint compatibility with your PCB layout. Ensure the operating voltage range aligns with your system's logic levels. Check RoHS compliance status if required by your manufacturing standards. Validate that the thermal characteristics of the exposed pad meet your heat dissipation requirements.

Selection Notes

Select this component when dual-channel low-side driving is required with minimal propagation delay. The 4A/6A drive strength suits medium-power MOSFETs. Consider the small 6-DFN package for space-constrained designs. Compare against single-channel drivers if only one output is needed. Evaluate thermal management needs due to the compact surface-mount form factor.

Part Context

This part belongs to IXYS' family of ultrafast MOSFET drivers, specifically designed for low-side applications. It complements other variants like the IXDI504D1 and IXDN402 series. The device integrates level shifting and protection features typical of modern gate driver ICs. It serves as a critical interface between low-voltage control logic and high-power switching devices.

FAQ

What is the difference between the non-inverting and inverting outputs?

The non-inverting output follows the input signal state, while the inverting output provides the logical complement. This allows for complementary drive schemes without external inverters.

What is the maximum supply voltage for the IXDF504D1T/R?

The device supports a supply voltage range from 10 V to 20 V, making it compatible with standard 12 V and 15 V logic levels.

IXDF504D1T/RIXDF504D1T/R
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