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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Littelfuse Inc.
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 35V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):9ns, 8ns
- Operating Temperature:-40°C ~ 125°C (TA)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package:8-SOIC-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The Littelfuse IXDF604SI is a dual low-side ultrafast MOSFET driver designed for high-speed switching applications. It features two independent channels with one inverting and one non-inverting output configuration, delivering a peak source/sink drive current of 4 A. The device operates within a supply voltage range of 4.5 V to 35 V and supports both N-channel and P-channel MOSFETs as well as IGBTs. Key electrical characteristics include a propagation delay of 40 ns, rise time of 9 ns, and fall time of 8 ns. It is qualified to AEC-Q100 Grade 1 standards and functions reliably across an extended temperature range from -40 °C to +125 °C.
Feature Summary
- AEC-Q100 Grade 1 qualified for automotive reliability requirements
- Dual channel architecture providing one inverting and one non-inverting output
- Ultrafast switching performance with 4 A source and sink drive capability
- Wide operating supply voltage range supporting diverse logic levels
Applications
- Automotive power electronics systems
- Industrial motor control drives
- High-frequency DC-DC converters
Procurement Notes
Verify the specific suffix (SI vs SIA) to confirm package type, as SI denotes SOIC-8 EP while SIA indicates standard SOIC-8. Confirm AEC-Q100 qualification status if automotive compliance is required. Check RoHS compliance dates against manufacturing lot codes. Ensure input signal compatibility with the specified voltage thresholds before integration into the design.
Selection Notes
Select this component when dual isolated gate driving is required for synchronous rectification or half-bridge configurations. The 4 A drive current suits medium-power MOSFETs and IGBTs. Consider the exposed pad thermal performance for PCB layout optimization. Verify that the 40 ns propagation delay meets the system timing constraints compared to faster alternatives.
Part Context
This part belongs to the IXD604 series of high-speed gate drivers manufactured by Littelfuse. The series is engineered for efficiency in power conversion circuits. The IXDF604SI variant specifically utilizes an 8-pin Power SOIC package with an exposed metal back for enhanced thermal dissipation. It serves as a robust interface between low-voltage logic controllers and high-power switching devices.
Replacement Considerations
The IXDD604SIA is a related variant within the same family but lacks the exposed pad thermal enhancement found in the IXDF604SI. Verify pinout compatibility and thermal management requirements when substituting. Ensure the replacement maintains the required AEC-Q100 qualification if used in automotive contexts.
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