— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:IXYS
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 35V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Inverting
- Rise / Fall Time (Typ):8ns, 8ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
Download product information
Overview
The IXDI402SIA is a dual low-side ultrafast MOSFET driver manufactured by IXYS Integrated Circuits. It features two independent drivers with a peak output current of 2 A and a supply voltage range of 4.5 V to 40 V. The device operates within a temperature range of -55°C to +125°C and utilizes SOIC-CT-8 packaging. Key electrical parameters include a rise time of 18 ns, a fall time of 17 ns, and a typical operating supply current of 3 mA. It supports CMOS and TTL logic inputs.
Feature Summary
- Dual low-side configuration for independent control of external switching devices
- Ultrafast switching performance with nanosecond-level rise and fall times
- Wide supply voltage compatibility supporting various gate drive requirements
- Robust operation across extended industrial temperature ranges
Applications
- Industrial motor drives requiring precise low-side switching
- Power supply circuits utilizing high-frequency MOSFETs
- Inverter systems needing isolated or non-isolated gate control
- Automotive electronics demanding wide temperature stability
Procurement Notes
Verify the specific suffix 'A' against the official datasheet to confirm pinout and functional specifications. Confirm RoHS compliance status through manufacturer documentation. Check for end-of-life notices as availability may vary. Ensure the SOIC-CT-8 package footprint matches the target PCB design. Validate input logic levels against the system microcontroller or controller interface.
Selection Notes
Select this component when dual low-side driving is required with fast switching speeds. The 2 A output current is suitable for medium-power MOSFETs. Consider the 40 V maximum supply voltage limit for high-side applications where bootstrap circuits are used. Evaluate thermal management needs given the 125°C maximum junction temperature. Compare propagation delays if timing synchronization is critical in the application.
Part Context
The IXDI402SIA belongs to the IXYS integrated circuit portfolio focused on power management and gate driving solutions. It complements the company's broader range of discrete power semiconductors like MOSFETs and IGBTs. This driver facilitates efficient control of power stages in conversion and inversion applications. It represents IXYS's capability in providing complete power electronic subsystem components.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
ChipApex | Global Electronic Components Supplier








