IXDI502PI

Overview

The IXDI502PI is a dual low-side gate driver IC manufactured by IXYS. It features independent channels designed to drive IGBTs and N-Channel or P-Channel MOSFETs. The device operates with an inverting configuration and supports supply voltages between 4.5 V and 35 V. Key electrical parameters include a maximum output current of 4 A, rise time of 9 ns, fall time of 8 ns, and quiescent supply current of 10 uA. It functions within a temperature range of -40°C to +125°C.

Feature Summary

• Dual independent channel architecture for simultaneous control of power switches
• Capable of driving IGBTs and both N-Channel and P-Channel MOSFETs
• Ultrafast switching performance with nanosecond-level rise and fall times

Applications

• Motor drives
• Inverters
• Power switch control circuits

Procurement Notes

Verify the specific suffix 'PI' corresponds to the DIP-8 through-hole package variant. Confirm that the inverting logic configuration aligns with the system design requirements. Ensure the operating voltage range of 4.5 V to 35 V matches the available supply rails. Check RoHS compliance status if required by manufacturing standards.

Selection Notes

Select this component when dual low-side driving capability is required for mixed technology loads including IGBTs and MOSFETs. The ultrafast switching characteristics make it suitable for high-frequency applications. Consider the 4 A peak output current for driving capacitive loads efficiently. Verify thermal management needs based on the specified operating temperature range.

Part Context

This part belongs to the IXD_604 series of gate drivers from IXYS Integrated Circuits. It is classified under PMIC - Power Management ICs and specifically MOSFET Gate Drivers. The manufacturer identifies it as a Clare brand product. It serves as a dedicated interface between logic controllers and high-power semiconductor switches.

Replacement Considerations

The IXDN502PI is a related dual low-side driver from the same manufacturer. Verify pinout compatibility and specific electrical parameter differences before substitution.