ChipApex | Global Electronic Components Supplier
IXDI502SIAT/R
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC GATE DRVR LOW-SIDE 8SOIC
- Series：-
- Mfr：IXYS
- Package：Tape & Reel (TR)
- Driven Configuration：Low-Side
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply：4.5V ~ 30V
- Logic Voltage - VIL, VIH：0.8V, 3V
- Current - Peak Output (Source, Sink)：2A, 2A
- Input Type：Inverting
- Rise / Fall Time (Typ)：7.5ns, 6.5ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
Download product information
Overview
The IXDI502SIAT/R is a dual low-side ultrafast MOSFET driver manufactured by IXYS Integrated Circuits Division. It operates within a supply voltage range of 4.5V to 35V and supports logic input thresholds of 0.8V (VIL) and 3V (VIH). The device provides symmetrical peak output currents of 2A for both sourcing and sinking. It features typical rise and fall times of 15ns and 22ns, respectively. Designed for surface-mount installation, it is housed in an 8-SOIC package with a width of 3.90mm. The component functions as an inverting driver and is rated for junction temperatures between -55°C and 150°C.
Feature Summary
- Dual-channel configuration providing independent low-side drive capabilities for power switches
- Ultrafast switching performance characterized by nanosecond-scale rise and fall times
- Robust thermal operation capability supporting extended industrial temperature ranges
Applications
- Driving N-channel MOSFETs in low-side power switching configurations
- High-frequency DC-DC converter topologies requiring fast transient response
- Industrial motor control systems utilizing IGBT or MOSFET arrays
Procurement Notes
Verify the specific suffix 'R' indicates tape-and-reel packaging when ordering. Confirm the manufacturer designation remains IXYS Integrated Circuits Division. Ensure compatibility with 3.3V logic interfaces given the specified VIH threshold. Check for RoHS compliance status if required by assembly specifications.
Selection Notes
Select this component for applications requiring dual isolated low-side gate driving without high-side complexity. The 2A peak current capability suits medium-power MOSFETs. Consider the 8-SOIC footprint for PCB layout constraints. Evaluate the inverting logic requirement against system signal polarity needs before integration.
Part Context
This part belongs to the IXDI series of gate drivers designed for power management applications. It complements higher-current variants like the IXDI609 by offering a compact dual-channel solution. The series targets efficiency improvements in switching power supplies and motor drives through optimized propagation delays.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers.
