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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DIP
- Series:-
- Mfr:IXYS
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 30V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Inverting
- Rise / Fall Time (Typ):9ns, 8ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-DIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The IXDI504PI is a dual low-side MOSFET gate driver manufactured by IXYS. It features two independent drivers with inverting logic configurations, designed for high-speed switching applications. The device operates within a supply voltage range of 4.5 V to 30 V and delivers a peak output current of 4 A. Key electrical parameters include a rise time of 9 ns and a fall time of 8 ns. It functions reliably across an operating temperature range from -55 °C to +150 °C and consumes a typical quiescent supply current of 10 µA.
Feature Summary
- Dual-channel architecture providing independent control for two low-side switches
- Ultrafast switching performance with nanosecond-level rise and fall times
- High peak drive capability supporting robust MOSFET and IGBT gate charging
- Wide operating temperature range suitable for demanding industrial environments
Applications
- Driving MOSFETs and IGBTs in power conversion circuits
- General-purpose power management systems requiring isolated or non-isolated gate control
- Industrial motor drives utilizing low-side switching topologies
Procurement Notes
Verify the specific suffix 'PI' corresponds to the DIP-8 through-hole package variant when sourcing. Confirm RoHS compliance status via the manufacturer's latest documentation, as regulatory updates may affect availability. Ensure the supplier provides genuine IXYS components to guarantee specified electrical characteristics and reliability standards are met.
Selection Notes
Select this component when a dual low-side driver with inverting logic is required for high-speed power switching. It is appropriate for designs needing 4 A peak current capability and operation up to 30 V supply voltage. Consider the wide temperature range if the application involves harsh thermal conditions. Verify that the inverting configuration aligns with the control signal requirements of the system.
Part Context
This part belongs to the IXD_604 series of CMOS high-speed MOSFET gate drivers. It is functionally similar to the IXDF504 and IXDN504, differing primarily in package type and specific logic configuration options. These drivers are engineered to interface directly with logic inputs while providing sufficient current to drive modern power semiconductors efficiently.
Replacement Considerations
The IXDF504PI and IXDN504PI are related variants within the same family. Verify pin compatibility and logic inversion requirements before substituting. No other direct cross-manufacturer substitutes are confirmed in public documentation.
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