IXDN402SIA

IXDN402SIA

  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:IXYS
  • Package:Tube

SKU:50dd4a2c4f10 Category: Brand:

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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:4.5V ~ 35V
  • Logic Voltage - VIL, VIH:0.8V, 3V
  • Current - Peak Output (Source, Sink):2A, 2A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):8ns, 8ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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IXDN402SIA

Overview

The IXDN402SIA is a dual low-side ultrafast MOSFET driver manufactured by IXYS. It operates within a supply voltage range of 10V to 20V and delivers a peak output current of 2A. The device utilizes an 8-SOIC surface-mount package. Key electrical characteristics include a typical propagation delay of 50ns and a short-circuit protection threshold of 3V. It supports high-frequency switching applications with fast rise and fall times, ensuring efficient control of external power MOSFETs in demanding environments.

Feature Summary

  • Dual-channel architecture for independent low-side gate drive control
  • Ultrafast switching performance with minimal propagation delay
  • Integrated short-circuit protection mechanism
  • Robust design supporting high-frequency operation

Applications

  • Industrial motor drives
  • High-frequency DC-DC converters
  • Inverter circuits

Procurement Notes

Verify the manufacturer designation as Littelfuse due to corporate acquisition history. Confirm the specific suffix 'SIA' corresponds to the standard 8-SOIC package variant. Ensure compatibility with existing PCB footprints and validate that the 2A drive current meets the target MOSFET gate charge requirements for the intended switching frequency.

Selection Notes

Select this component when dual isolated or non-isolated low-side driving is required for medium-power MOSFETs. The 2A peak current capability suits applications where moderate switching speeds are sufficient without excessive electromagnetic interference. Consider thermal management within the SOIC package if operating near maximum ambient temperature limits.

Part Context

This device belongs to the IXYS family of power management integrated circuits, specifically designed for gate driving applications. It complements other drivers in the series by offering a compact solution for dual-channel control. The product line focuses on reliability and speed for industrial and consumer power electronics.

Replacement Considerations

Check for direct pin-compatible alternatives from Littelfuse or IXYS legacy portfolios. Verify that substitute devices maintain the 2A output current and 10-20V supply range. Ensure equivalent propagation delays to prevent timing mismatches in bridge configurations.

IXDN402SIAIXDN402SIA

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