IXDN414YI

IXDN414YI

  • Description:IC GATE DRVR LOW-SIDE TO263
  • Series:-
  • Mfr:IXYS
  • Package:Tube

SKU:ae48ecf3a1a1 Category: Brand:

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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE TO263
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • Driven Configuration:Low-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:4.5V ~ 35V
  • Logic Voltage - VIL, VIH:0.8V, 3.5V
  • Current - Peak Output (Source, Sink):14A, 14A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):22ns, 20ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
  • Supplier Device Package:TO-263-5
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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IXDN414YI

Overview

The IXDN414YI is a high-speed, high-current gate driver designed to drive large MOSFETs and IGBTs. It features a low-side configuration with non-inverting logic input. The device delivers peak output currents of 14A for both sourcing and sinking. It operates within a supply voltage range of 4.5V to 35V and supports logic thresholds of 0.8V (low) and 3.5V (high). Typical rise and fall times are 22ns and 20ns respectively. It functions in temperatures from -55°C to 150°C junction and is housed in a TO-263-5 package.

Feature Summary

  • High current capability of 14A peak source and sink output
  • Ultrafast switching performance with typical 20ns fall time
  • Wide operating junction temperature range up to 150°C
  • Non-inverting logic interface compatible with standard drivers

Applications

  • Driving large power MOSFETs
  • Driving IGBT modules
  • High-frequency power conversion circuits
  • Motor control applications requiring fast switching

Procurement Notes

Verify the specific suffix YI corresponds to the TO-263-5 surface mount package. Confirm RoHS compliance status as per the latest manufacturer datasheet. Check for any recent Product Change Notifications (PCN) regarding assembly or material changes. Ensure the supplier provides valid traceability documentation for industrial grade components.

Selection Notes

Select this component when driving large capacitive loads such as big MOSFETs or IGBTs where high peak current is required to minimize switching losses. The low-side configuration limits use to half-bridge or single-ended topologies. Verify that the system's logic voltage levels align with the specified 0.8V/3.5V thresholds. Consider thermal management due to the 150°C junction rating.

Part Context

The IXDN414YI belongs to the IXYS IXDN414 series of gate drivers. This family includes variants like the IXDN414PI and IXDN414SI, which differ primarily in packaging. The YI suffix specifically denotes the TO-263-5 package, distinguishing it from the SOIC-14 or DIP options available in the broader product line.

Replacement Considerations

Direct substitutes include other IXDN414 variants if package compatibility allows, such as IXDN414SI for SOIC-14. Cross-brand replacements require matching 14A peak current, low-side topology, and similar switching speeds. Verify pinout compatibility before substitution.

IXDN414YIIXDN414YI

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