IXDN430CI

IXDN430CI

  • Description:IC GATE DRVR LOW-SIDE TO220-5
  • Series:-
  • Mfr:IXYS
  • Package:Tube

SKU:61580a799cd6 Category: Brand:

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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE TO220-5
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • Driven Configuration:Low-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:8.5V ~ 35V
  • Logic Voltage - VIL, VIH:0.8V, 3.5V
  • Current - Peak Output (Source, Sink):30A, 30A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):18ns, 16ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-5
  • Supplier Device Package:TO-220-5
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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IXDN430CI

Overview

The IXDN430CI is a high-speed, high-current low-side gate driver IC designed to drive MOSFETs and IGBTs. It features ultrafast switching capabilities with a peak output current of 30 Amps. The device operates on a supply voltage range compatible with standard logic levels, supporting CMOS and TTL inputs. It includes an internal bootstrap diode for high-side driving applications when used in bridge configurations. The component is housed in a TO-220 package, providing robust thermal performance for industrial power electronics.

Feature Summary

  • High-speed operation with ultrafast switching characteristics for efficient power control
  • High current output capability of 30 Amps to drive large power switches
  • Integrated bootstrap diode simplifies circuit design for half-bridge applications
  • Compatible with CMOS and TTL logic input levels

Applications

  • Industrial motor drives and inverters
  • Switch-mode power supplies (SMPS)
  • High-frequency power conversion systems

Procurement Notes

Verify the specific suffix 'CI' corresponds to the required temperature grade and packaging variant. Confirm that the TO-220 package style matches your PCB footprint requirements. Ensure the supplier provides original manufacturer documentation to validate authenticity against counterfeits common in power semiconductor markets.

Selection Notes

Select this driver for applications requiring high peak current to minimize switching losses in MOSFETs or IGBTs. Consider the low-side configuration limitation; use complementary drivers for full-bridge topologies. Evaluate thermal management needs due to the TO-220 package's heat dissipation characteristics under continuous high-current operation.

Part Context

The IXDN430CI belongs to the IXYS IXDN/IXDI/IXDD/IXDS series of gate drivers. This family is engineered for demanding power electronics environments, offering a balance of speed and drive strength. It serves as a critical interface between low-power control logic and high-power semiconductor switches.

Replacement Considerations

Check for direct pin-compatible alternatives within the same IXYS series, such as other variants in the IXDN430 family, ensuring identical current ratings and package types. Verify electrical compatibility before substituting with generic equivalents.

IXDN430CIIXDN430CI

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