IXDN430MYI

IXDN430MYI

  • Description:IC GATE DRVR LOW-SIDE TO263
  • Series:-
  • Mfr:IXYS
  • Package:Box

SKU:624cc0c0e961 Category: Brand:

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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE TO263
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • Driven Configuration:Low-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:8.5V ~ 35V
  • Logic Voltage - VIL, VIH:0.8V, 3.5V
  • Current - Peak Output (Source, Sink):30A, 30A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):18ns, 16ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
  • Supplier Device Package:TO-263-5
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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IXDN430MYI

Overview

The IXDN430MYI is a high-speed, high-current gate driver from IXYS Integrated Circuits, designed to drive MOSFETs and IGBTs. It features a 30A peak output current capability with a low on-resistance of 0.4 Ohms. The device operates within a supply voltage range of 10V to 20V and supports CMOS and TTL logic inputs. Packaged in a TO-263 (D2PAK) surface-mount housing, it ensures efficient switching performance for power electronics applications requiring robust gate control.

Feature Summary

  • High-speed operation with high current drive capability for rapid switching
  • Low on-resistance output stage for efficient power delivery
  • Compatible with standard CMOS and TTL logic input levels
  • Surface-mount TO-263 package for compact board integration

Applications

  • Industrial motor drives
  • Switching power supplies
  • Inverter circuits

Procurement Notes

Verify the specific suffix MYI against the manufacturer's official datasheet to confirm pinout and electrical specifications match your design requirements. Ensure thermal management solutions are adequate for the TO-263 package under expected load conditions. Cross-reference with authorized distributors to confirm component authenticity and availability status prior to finalizing procurement plans.

Selection Notes

Select this component when driving high-power MOSFETs or IGBTs requiring fast switching speeds and significant gate charge currents. The TO-263 package suits applications needing better thermal dissipation than smaller SMD packages. Verify that the 30A peak current rating aligns with the target switch's gate capacitance and required rise/fall times for optimal efficiency.

Part Context

This part belongs to the IXYS IXDN/IXDI/IXDD series of high-performance gate drivers. These devices are engineered specifically for power semiconductor switching applications. The series offers various packaging options and drive strengths to accommodate different power levels and form factors in modern electronic systems.

Replacement Considerations

Check for direct equivalents within the IXDN430 family, such as IXDI430 or IXDD430, which may share similar electrical characteristics but differ in packaging or isolation features. Always consult the latest datasheets to ensure functional compatibility before substitution.

IXDN430MYIIXDN430MYI

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