IXDN502D1T/R

IXDN502D1T/R

$0.61
  • Description:IC GATE DRVR LOW-SIDE 6DFN
  • Series:-
  • Mfr:IXYS
  • Package:Tape & Reel (TR)

SKU:d15b443d94e7 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE 6DFN
  • Series:-
  • Mfr:IXYS
  • Package:Tape & Reel (TR)
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:4.5V ~ 30V
  • Logic Voltage - VIL, VIH:0.8V, 3V
  • Current - Peak Output (Source, Sink):2A, 2A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):7.5ns, 6.5ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VDFN Exposed Pad
  • Supplier Device Package:6-DFN (4x5)
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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IXDN502D1T/R

Overview

The IXDN502D1T/R is a dual low-side ultrafast MOSFET driver manufactured by IXYS. It features two independent channels designed for high-speed switching applications. The device operates with a supply voltage range of 4.5V to 30V and provides peak output currents of 2A for both sourcing and sinking. It utilizes a 6-DFN (4x5mm) surface-mount package with an exposed pad for thermal management. The driver supports logic input levels of 0.8V and 3V, ensuring compatibility with various control interfaces.

Feature Summary

  • Dual independent channel configuration for simultaneous low-side drive
  • Ultrafast switching performance with typical rise and fall times of 7.5ns and 6.5ns respectively
  • Robust 2A peak source and sink current capability
  • Wide operating junction temperature range from -55°C to +150°C

Applications

  • High-frequency DC-DC converters
  • Motor control systems requiring fast MOSFET switching
  • Industrial power supplies
  • Inverter circuits

Procurement Notes

Verify the specific suffix 'T/R' indicates tape and reel packaging when ordering. Confirm the component status as discontinued or obsolete through official IXYS channels prior to finalizing procurement plans. Ensure the 6-DFN footprint matches the design layout requirements. Check for RoHS compliance documentation if required by project specifications.

Selection Notes

Select this component for applications requiring dual low-side driving with high speed and moderate current capacity. The 6-DFN package is suitable for space-constrained designs. Consider the 2A drive strength sufficient for small to medium-sized MOSFETs. Evaluate thermal dissipation needs given the exposed pad design in the DFN package.

Part Context

This part belongs to the IXYS IXDN/IXDI series of gate drivers, which are optimized for driving power MOSFETs and IGBTs. The series offers various configurations including single and dual channels with different drive strengths and isolation options. The IXDN502D1T/R specifically targets non-isolated low-side applications requiring fast response times.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Verify pin-to-pin compatibility and electrical parameter equivalence with potential alternatives before substitution.

IXDN502D1T/RIXDN502D1T/R
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