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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 6DFN
- Series:-
- Mfr:IXYS
- Package:Box
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 30V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):9ns, 8ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-VDFN Exposed Pad
- Supplier Device Package:6-DFN (4x5)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The IXDN504D1 is a dual low-side ultrafast MOSFET driver manufactured by IXYS. It features non-inverting outputs and is designed for high-speed switching applications. The device operates within a supply voltage range of 4.75 V to 20 V. It provides a peak output current capability of 4 A to drive power MOSFETs efficiently. The component is housed in a compact 6-DFN package, measuring 4 mm by 5 mm. It supports operating temperatures from -40 °C to +125 °C. The driver ensures reliable performance with low propagation delay characteristics suitable for modern power electronics.
Feature Summary
- Dual channel configuration providing independent control for two low-side MOSFETs
- Ultrafast switching speed optimized for high-frequency power conversion
- Non-inverting logic interface simplifies gate drive circuit design
- Compact surface-mount packaging facilitates dense PCB layout
Applications
- High-frequency DC-DC converters
- Motor drive inverters
- Industrial power supplies
- Uninterruptible power systems (UPS)
Procurement Notes
Verify the specific suffix D1 against the manufacturer's latest datasheet to confirm pinout and electrical specifications. Ensure the supplier provides original manufacturer documentation to validate authenticity. Check RoHS compliance status as per current regulatory requirements. Confirm the package type matches the 6-DFN footprint required for your design. Validate the operating temperature range suitability for your specific application environment.
Selection Notes
Select this component when dual low-side driving is required in space-constrained designs. The 4 A peak current capability supports fast charging and discharging of MOSFET gates. Consider the 6-DFN package for automated assembly processes. Evaluate the propagation delay specifications against your system's timing requirements. Ensure the supply voltage range aligns with your control logic levels.
Part Context
The IXDN504D1 belongs to IXYS' portfolio of gate driver integrated circuits. These drivers are engineered to interface between low-voltage control logic and high-power switching devices. The series emphasizes speed and reliability for demanding power electronic applications. IXYS, now part of Littelfuse, continues to support these components for industrial and automotive markets.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the 6-DFN footprint and 4 A drive current. Verify compatibility with existing PCB layouts and thermal management strategies before substitution.
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