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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 6DFN
- Series:-
- Mfr:IXYS
- Package:Tape & Reel (TR)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 30V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):9ns, 8ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-VDFN Exposed Pad
- Supplier Device Package:6-DFN (4x5)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The IXDN504D1T/R is a dual low-side ultrafast MOSFET driver manufactured by IXYS. It features two independent non-inverting channels designed to drive IGBT and MOSFET gates in power management applications. The device operates within a supply voltage range of 4.5 V to 30 V. It provides a peak output current of 4 A per channel, ensuring fast switching speeds for efficient power conversion. The component is housed in a compact 6-DFN package measuring 4x5 mm, suitable for surface-mount assembly.
Feature Summary
- Dual-channel architecture with independent non-inverting outputs
- Ultrafast switching capability for high-frequency operation
- Robust 4 A peak drive current per channel
- Wide supply voltage compatibility from 4.5 V to 30 V
Applications
- IGBT gate driving in industrial motor drives
- MOSFET gate driving in DC-DC converters
- Power management systems requiring fast switching
- Inverter circuits for renewable energy applications
Procurement Notes
Verify the manufacturer part number against official IXYS or Littelfuse documentation to ensure authenticity. Confirm that the received components match the specified 6-DFN package dimensions and pinout configuration. Check for RoHS compliance markings as indicated in standard product listings. Ensure storage conditions adhere to moisture sensitivity level requirements for DFN packages.
Selection Notes
Select this component when dual isolated low-side driving is required for synchronous rectification or half-bridge configurations. The 4 A drive strength supports medium-power MOSFETs and IGBTs without external buffer stages. Consider the 6-DFN footprint for space-constrained PCB layouts. Evaluate thermal performance based on expected switching frequency and load current to determine if additional heatsinking is necessary.
Part Context
This device belongs to the IXDN50x series of gate drivers, which are optimized for high-speed power switching applications. The series includes variants with different current ratings and channel counts. The IXDN504D1T/R specifically addresses the need for dual-channel control in compact form factors, bridging the gap between single-channel drivers and larger multi-channel solutions.
Replacement Considerations
Cross-reference with other IXYS dual low-side drivers such as the IXDN502D1T/R for lower current needs. Verify pin-to-pin compatibility before substituting with similar offerings from other manufacturers. Ensure that alternative devices meet the same 4.5 V to 30 V supply range and 4 A drive current specifications.
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