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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:IXYS
- Package:Tape & Reel (TR)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 30V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):9ns, 8ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The IXDN504SIAT/R is a low-side gate driver manufactured by IXYS Integrated Circuits. It features dual non-inverting outputs designed for driving ultrafast MOSFETs. The device operates with a supply voltage range of 4.5 V to 20 V and supports CMOS and TTL logic inputs. It provides a peak output current of 4 Amperes per channel with an on-resistance of 2.5 Ohms. The component is housed in an 8-SOIC surface-mount package and functions within a temperature range of -55°C to +125°C.
Feature Summary
- Dual low-side configuration for independent control of two external switches
- Ultrafast switching capability optimized for high-speed MOSFET applications
- Direct compatibility with standard CMOS and TTL logic families
Applications
- High-frequency DC-DC converter topologies
- Motor drive circuits requiring fast switching transitions
- Inverter bridge stages in power conversion systems
Procurement Notes
Verify the specific suffix 'T/R' indicates tape-and-reel packaging when sourcing, as this differs from tube-packaged variants like the IXDN504SIA. Confirm the manufacturer status, noting that IXYS has been acquired by Littelfuse, which may affect long-term availability and documentation support channels. Ensure the order matches the exact part number to avoid functional mismatches with similar single-channel or different current-rated drivers.
Selection Notes
Select this component when dual isolated low-side driving is required for synchronous rectification or half-bridge configurations. It is suitable for designs needing 4A peak current capability with minimal propagation delay. Consider the 8-SOIC package constraints for thermal management and PCB layout space compared to larger packages used in higher power variants.
Part Context
This part belongs to the IXDN50x series of ultrafast MOSFET drivers from IXYS. It serves as a dual-channel variant within the lineup, complementing single-channel models like the IXDN509SIA. The series is characterized by high peak output currents and fast rise/fall times, targeting efficient power management and motor control applications across industrial and consumer electronics sectors.
Replacement Considerations
The IXDN504SIA is a direct pin-compatible alternative differing primarily in packaging (tube vs. tape-and-reel). Verify electrical specifications match exactly before substitution, as other series members may have different current ratings or channel counts.
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