IXDN514SIA

IXDN514SIA

  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:IXYS
  • Package:Tube

SKU:27710e6b9c68 Category: Brand:

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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • Driven Configuration:Low-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:4.5V ~ 30V
  • Logic Voltage - VIL, VIH:1V, 2.5V
  • Current - Peak Output (Source, Sink):14A, 14A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):25ns, 22ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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IXDN514SIA

Overview

The IXDN514SIA is a single-channel low-side gate driver IC designed for driving IGBTs and MOSFETs. It features a non-inverting input and operates within a supply voltage range of 4.5V to 35V. The device provides peak output currents of 14A source and sink, with typical rise and fall times of 25ns and 18ns respectively. Logic thresholds are defined at 0.8V (VIL) and 3V (VIH). It is housed in an 8-SOIC package with an exposed pad and supports junction temperatures from -55°C to 150°C.

Feature Summary

  • Built using CMOS and IXYS HDMOSTM processes for compatibility
  • Latch-up protected over the entire operating range
  • Non-inverting logic input configuration

Applications

  • IGBT gate drive applications
  • N-Channel MOSFET switching
  • P-Channel MOSFET switching

Procurement Notes

Verify component status as the IXDN514SIA is listed as obsolete by major distributors. Confirm availability through authorized channels or secondary markets if sourcing for production. Ensure the specific suffix matches the required package variant. Cross-reference datasheet revisions to confirm pinout and electrical characteristics remain consistent with design requirements before final procurement decisions.

Selection Notes

Select this component for low-side switching applications requiring high peak current capability. The 14A output drive is suitable for medium-power IGBTs and MOSFETs. Consider the non-inverting logic requirement against system control signals. Evaluate thermal management needs due to the exposed pad design. Compare against newer alternatives like the IXDN614SITR if new designs allow, noting potential differences in package or performance metrics.

Part Context

The IXDN514SIA belongs to the IXYS IXDN series of gate drivers. This series utilizes proprietary HDMOSTM technology combined with CMOS processes. These drivers are engineered for robust performance in power electronics. The low-side configuration simplifies circuit design for half-bridge or single-switch topologies. The family focuses on reliability and latch-up immunity for industrial environments.

Replacement Considerations

The IXDN614SITR is a functional replacement offering similar low-side drive capabilities. Verify pin compatibility and electrical specifications such as peak current and propagation delay. Check for any changes in package dimensions or thermal characteristics when substituting.

IXDN514SIAIXDN514SIA

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