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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DIP
- Series:-
- Mfr:Littelfuse Inc.
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 35V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):7.5ns, 6.5ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-DIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The Littelfuse IXDN602PI is a dual high-speed non-inverting gate driver designed for low-side ultrafast MOSFET applications. It delivers a peak source and sink drive current of 2A, ensuring robust switching performance for power devices. The device operates within a wide supply voltage range of 4.5V to 35V and supports an extended operating temperature range from -40°C to +125°C. Key electrical parameters include an input delay of 35ns and an output delay of 38ns. It features optically isolated input-to-output capability, allowing configuration for AC and DC switching with a control current of 5mA.
Feature Summary
- Dual channel architecture providing independent control for low-side switching applications
- High-speed operation with specified input and output delays for precise timing control
- Optical isolation between input and output circuits to prevent noise coupling
- Extended thermal stability suitable for demanding industrial environments
Applications
- Driving ultrafast MOSFETs in power conversion systems
- IGBT gate driving in industrial motor controls
- AC and DC switching configurations requiring optical isolation
- Efficient power management circuits minimizing EMI/RFI generation
Procurement Notes
Verify the specific suffix or tape-and-reel designation against the manufacturer's latest datasheet to ensure compatibility with automated assembly processes. Confirm that the optical isolation rating meets the safety requirements of your target application. Cross-reference the pinout diagram with your PCB layout to avoid misalignment during installation. Ensure the supply voltage remains within the 4.5V to 35V operational window to maintain device integrity.
Selection Notes
Select this component when dual-channel low-side driving is required with high peak current capabilities. The 2A drive strength is sufficient for most modern ultrafast MOSFETs and IGBTs. Consider the extended temperature range if the operating environment exceeds standard commercial limits. The non-inverting logic simplifies control interface design compared to complementary pairs. Verify that the optical isolation barrier voltage rating aligns with system ground potential differences.
Part Context
The IXDN602PI belongs to the IXYS/Littelfuse family of high-performance gate drivers. It is engineered specifically to drive the latest generation of power semiconductors efficiently. The device integrates optical isolation to enhance system reliability by breaking ground loops. Its compact design supports high-density power electronics layouts. This series is widely recognized for its balance of speed, drive strength, and thermal resilience in power control modules.
Replacement Considerations
Check for direct cross-reference part numbers from Littelfuse or IXYS product transition notices. Verify that any substitute maintains the 2A peak current and 4.5-35V supply range. Ensure the replacement offers equivalent optical isolation specifications and delay times. Confirm package compatibility to avoid PCB redesign efforts.
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