— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Littelfuse Inc.
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 35V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):7.5ns, 6.5ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
Download product information
Overview
The IXDN602SIA is a dual low-side ultrafast MOSFET gate driver from Littelfuse, designed for driving modern power semiconductors. It delivers a peak source and sink drive current of 2A per channel, enabling voltage rise and fall times of less than 10ns. The device operates within an extended temperature range of -40°C to +125°C and supports a supply voltage range of 4.5V to 35V. Each input withstands negative swings up to 5V while remaining CMOS compatible. Packaged in an 8-SOIC (PDSO8) format, it features optically isolated inputs with no EMI or RFI generation.
Feature Summary
- Dual-channel low-side configuration with 2A peak source/sink drive capability
- Ultrafast switching performance with rise and fall times under 10ns
- Optically isolated input-to-output architecture preventing EMI/RFI generation
- Extended operating temperature range from -40°C to +125°C
Applications
- Driving latest MOSFET and IGBT power switches
- AC and DC switching circuit configurations
- Industrial power control systems
- Energy-efficient designs requiring fast switching speeds
Procurement Notes
Verify the specific suffix 'SIA' corresponds to the SOIC-8 package and RoHS compliance status as documented in official Littelfuse datasheets. Confirm that the optically isolated input requirements match your system's isolation needs. Ensure the 2A peak current rating aligns with the target MOSFET or IGBT gate charge specifications. Check for any specific ordering suffix variations that might affect pinout or thermal characteristics.
Selection Notes
Select this component when high-speed switching of low-side power devices is required without the complexity of high-side drivers. The dual-channel design allows for synchronized control of two independent loads. Consider the 35V maximum supply voltage limit and the -40°C to +125°C operating range for environmental suitability. The optically isolated inputs simplify layout by reducing ground loop issues compared to non-isolated alternatives.
Part Context
The IXDN602SIA belongs to the IXD_602 series of gate drivers manufactured by Littelfuse Inc. This series focuses on providing robust, high-current drive capabilities for power semiconductor applications. The manufacturer specializes in industrial technology products including fuses, relays, and semiconductors, aiming to enable safe electrical energy transfer across various sectors.
Replacement Considerations
Consult official Littelfuse documentation for direct cross-references. Verify compatibility regarding package dimensions, pinout assignments, and electrical parameters such as peak current and operating voltage before substitution.
ChipApex | Global Electronic Components Supplier









