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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Littelfuse Inc.
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 35V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):7.5ns, 6.5ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The IXDN602SIATR is a dual low-side ultrafast MOSFET driver manufactured by Littelfuse Inc. It operates within a supply voltage range of 4.5V to 35V and provides a peak source/sink drive current of 2A per channel. The device features typical rise and fall times of 7.5ns and 6.5ns, respectively. It is housed in an 8-lead SOIC package with a width of 3.90mm. The component supports an extended operating temperature range from -40°C to +125°C and is RoHS compliant.
Feature Summary
- Dual output configuration providing independent high-speed driving for two channels
- Ultrafast switching performance with sub-10ns transition times
- CMOS-compatible input logic levels for direct microcontroller interfacing
- Wide operating voltage range supporting various power supply architectures
Applications
- Driving MOSFETs and IGBTs in motor control applications
- High-frequency DC-DC converter topologies
- Inverter circuits requiring fast switching speeds
- Power management systems utilizing low-side switching
Procurement Notes
Verify the specific ordering suffix 'ATR' confirms tape-and-reel packaging when sourcing. Confirm the manufacturer designation as Littelfuse or IXYS Semiconductor, as both entities have historically produced this component family. Ensure the datasheet version matches the required operating temperature range specifications for your application environment.
Selection Notes
Select this component for applications requiring dual low-side gate driving with high peak current capability. The 2A output current is suitable for driving medium-power MOSFETs and IGBTs without external buffering. Consider the 8-SOIC package constraints for PCB layout and thermal management requirements relative to the expected switching frequency and duty cycle.
Part Context
This part belongs to the IXDN602 series of dual low-side drivers. It is designed for general-purpose power switching applications where speed and drive strength are critical. The series typically includes variants with different packaging options such as DIP or SOIC, but the SIATR variant specifically denotes the surface-mount SOIC package with reel packaging.
Replacement Considerations
Check for exact pin-compatible alternatives within the IXDN602 family that may offer different packaging or temperature grades. Verify that any substitute maintains the 2A peak current rating and similar propagation delay characteristics to ensure circuit performance stability.
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