— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DIP
- Series:-
- Mfr:Littelfuse Inc.
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 35V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):9ns, 8ns
- Operating Temperature:-40°C ~ 125°C (TA)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm), 6 Leads
- Supplier Device Package:8-DIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The IXDN604PI is a high-speed, dual-channel IGBT and MOSFET gate driver manufactured by Littelfuse. It features independent inputs for precise control of switching events. The device provides symmetrical peak output currents to ensure fast turn-on and turn-off times, minimizing switching losses in power applications. It operates with a wide supply voltage range and includes built-in protection mechanisms such as desaturation detection and shoot-through prevention. The component is housed in an isolated package suitable for demanding industrial environments.
Feature Summary
- Dual-channel architecture enabling independent control of high-side and low-side switches
- Integrated desaturation detection for short-circuit protection
- Shoot-through prevention logic to avoid simultaneous conduction
- High peak output current capability for rapid gate charging
Applications
- Industrial motor drives
- Switched-mode power supplies (SMPS)
- Inverter circuits
- Uninterruptible power systems (UPS)
Procurement Notes
Verify the specific suffix 'PI' against the manufacturer's official datasheet to confirm pinout compatibility and isolation ratings. Ensure that the ordering information matches the exact thermal and electrical requirements of the target design. Cross-reference the date code and lot traceability if required for quality assurance protocols before finalizing procurement orders.
Selection Notes
Select this component when dual-channel isolation and robust short-circuit protection are required. Evaluate the peak output current specifications against the total gate charge of the connected IGBTs or MOSFETs. Consider the operating temperature range and isolation voltage ratings relative to the system's safety standards and noise environment.
Part Context
This part belongs to the IXDN series of gate drivers designed for power electronics. It complements other single-channel or multi-channel variants by offering integrated protection features. The series is widely used in applications requiring reliable switching of power semiconductors with minimal external component count.
Replacement Considerations
- IXDN604I
- IXDN604P
FAQ
What is the primary function of the desaturation detection feature?
It monitors the collector-emitter voltage of the connected IGBT to detect short circuits and rapidly shuts down the gate drive to prevent device failure.
How does the shoot-through prevention mechanism work?
It introduces a dead-time delay between the turn-off of one switch and the turn-on of the complementary switch to prevent both from conducting simultaneously.
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