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IXDN609SIA
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Product Detailed Parameters
- Description：IC GATE DRVR LOW-SIDE 8SOIC
- Series：-
- Mfr：Littelfuse Inc.
- Package：Tube
- Driven Configuration：Low-Side
- Channel Type：Single
- Number of Drivers：1
- Gate Type：IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply：4.5V ~ 35V
- Logic Voltage - VIL, VIH：0.8V, 3V
- Current - Peak Output (Source, Sink)：9A, 9A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：22ns, 15ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The IXDN609SIA is a high-speed, low-side MOSFET gate driver manufactured by Littelfuse Inc. It operates within a supply voltage range of 4.5V to 35V and delivers a peak output current of 9A. The device is housed in an 8-lead SOIC surface-mount package. It supports an extended operating junction temperature range from -55°C to 150°C. The component features fast switching capabilities with rise and fall times specified at 22ns and 15ns respectively under standard conditions, ensuring efficient control of power switches.
Feature Summary
- Provides high-current drive capability for rapid MOSFET switching
- Designed specifically for driving latest generation IXYS MOSFETs and IGBTs
- Operates reliably across an extended industrial temperature range
Applications
- High-speed power conversion circuits
- Industrial motor drives
- Inverter systems using IXYS MOSFETs or IGBTs
Procurement Notes
Verify the specific suffix 'SIA' against the official Littelfuse datasheet to confirm it denotes the standard commercial grade variant rather than the automotive qualified 'SI' version. Ensure the ordering information matches the required package type and compliance standards before finalizing procurement.
Selection Notes
Select this component when a low-side configuration with high peak current is required for ultrafast switching applications. It is suitable for designs needing robust drive strength for modern power semiconductors within a compact SOIC-8 footprint.
Part Context
This part belongs to the IXD_609 series of high-speed gate drivers. The series includes variants such as IXDD609 and IXDI609, which share similar performance characteristics but may differ in pinout or specific electrical parameters. The IXDN609SIA represents the low-side driver option within this family.
Replacement Considerations
Official substitutes include other members of the IXD_609 series such as IXDD609 or IXDI609, provided their specific electrical characteristics and pin configurations are compatible with the existing design requirements.
