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The IXYS IXEN60N120D1 is a phase-out NPT3 IGBT module in the miniBLOC (SOT-227B) package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C. The saturation voltage is typically 2.1 V at 60 A. The D1 variant integrates an optional HiPerFRED diode with a forward voltage of 2.3 V at 60 A. Thermal resistance from junction to case is 0.28 K/W for the IGBT and 0.6 K/W for the diode. Operating temperature ranges from -40°C to +150°C.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm datasheet revision status due to phase-out designation. Ensure thermal interface material compatibility with the specified mounting torque requirements for reliable operation.
Select this module for high-voltage applications requiring robust short-circuit capability and resonant circuit performance. Consider the integrated diode characteristics for freewheeling requirements. Evaluate thermal management solutions based on the specified junction-to-case thermal resistance values.
This component belongs to the IXEN series of NPT3 IGBT modules manufactured by IXYS. It utilizes the industry-standard miniBLOC outline. The product line is designed for high-power switching applications requiring high reliability and efficient thermal dissipation capabilities.
The datasheet identifies this component as phase-out. No direct substitute part numbers are provided within the verified source material. Alternative selection requires independent evaluation of electrical and mechanical specifications.
The maximum collector-emitter voltage (VCES) is rated at 1200 V.
Yes, the D1 version includes an optional HiPerFRED diode with a typical forward voltage of 2.3 V at 60 A.
The recommended mounting torque for M4 screws is 1.5 Nm.