IXFA4N85X

Single FETs, MOSFETs Overview

The IXFA4N85X is an N-channel enhancement mode power MOSFET from the IXYS HiPerFET X-Class series. It utilizes Ultra Junction technology to achieve high voltage blocking capability with low on-resistance. The device features a TO-263 (D2PAK) surface-mount package designed for efficient thermal dissipation in compact designs. Key electrical characteristics include an 850V drain-source breakdown voltage and a continuous drain current rating of 4A at case temperature. The component operates within a junction temperature range of -55°C to +150°C, supporting robust performance in demanding power conversion environments.

Single FETs, MOSFETs Feature Summary

• Ultra Junction technology for optimized trade-off between conduction and switching losses
• High avalanche energy rating for improved ruggedness in inductive load applications
• Surface-mount D2PAK package for automated assembly and thermal efficiency

Single FETs, MOSFETs Applications

• High-frequency DC-DC converters
• Uninterruptible power supply (UPS) systems
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix or variant code against the manufacturer's latest datasheet to ensure compatibility with required thermal and electrical specifications. Confirm RoHS compliance status and packaging type directly with authorized distributors prior to ordering. Cross-reference the part number with Littelfuse documentation following corporate acquisitions to ensure accurate sourcing and technical support availability.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation with moderate current handling in a surface-mount form factor. Evaluate the thermal resistance characteristics of the TO-263 package against the expected power dissipation in the target design. Ensure gate drive voltages remain within the specified limits to maintain optimal Rds(on) performance without risking gate oxide breakdown.

Single FETs, MOSFETs Part Context

This device belongs to the IXYS HiPerFET X-Class family, which integrates advanced trench gate and Ultra Junction technologies. These components are engineered to reduce switching losses and improve overall system efficiency compared to traditional planar MOSFETs. The series targets high-performance power supplies and industrial motor drives where size and efficiency are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 850V Vds rating, N-channel configuration, and TO-263 package. Verify that substitute parts offer comparable Rds(on) and gate charge values to maintain switching performance. Check for pinout compatibility and thermal pad configurations to ensure mechanical fit.