IXFC80N085

Single FETs, MOSFETs Overview

The IXFC80N085 is an obsolete N-Channel enhancement mode power MOSFET from the HiPerFET HDMOSTM family, housed in an ISOPLUS220 package. It features a silicon chip on a direct-copper-bond substrate for high power dissipation and an electrically isolated back surface rated at 2500 Vrms. Key electrical parameters include a drain-source voltage (VDSS) of 85 V, a continuous drain current (ID25) of 80 A, and a maximum on-resistance (RDS(on)) of 11 mΩ. The device supports unclamped inductive switching (UIS) up to 320 A and includes a fast intrinsic rectifier with a reverse recovery time (trr) of 200 ns.

Single FETs, MOSFETs Feature Summary

• Electrically isolated mounting surface via Direct-Copper-Bond substrate
• High dv/dt capability and rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated for avalanche energy
• Fast intrinsic rectifier with low reverse recovery charge

Single FETs, MOSFETs Applications

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control

Single FETs, MOSFETs Procurement Notes

This component is officially marked as OBSOLETE by the manufacturer. Verification of availability should focus on surplus distributors or secondary markets rather than standard supply channels. Confirm the specific revision status and datasheet version before integration, as production has ceased. Ensure that any replacement strategy accounts for the discontinuation of this specific ISOPLUS220 form factor.

Single FETs, MOSFETs Selection Notes

Select this part only if the design specifically requires the ISOPLUS220 package with its integrated isolation capabilities. The 85 V rating and 80 A current capacity define its operational envelope. Consider the thermal resistance values (RthJC 0.54 K/W) when designing heat sinks. Verify that the system can accommodate the 2500 V isolation requirement between leads and the tab, which distinguishes it from standard TO-247 devices.

Single FETs, MOSFETs Part Context

The IXFC80N085 belongs to the HiPerFET HDMOSTM series, characterized by high dv/dt performance and low reverse recovery times. It utilizes a unique ISOPLUS220 package that provides electrical isolation without requiring external insulating foils or screws. This architecture allows for higher power density and simplified assembly compared to traditional isolated packages.

Single FETs, MOSFETs Replacement Considerations

As the part is obsolete, no official direct substitute is listed in the provided documentation. Designers must evaluate alternative N-channel MOSFETs with similar 85 V ratings and comparable RDS(on) values. Package compatibility may require PCB redesign if a different footprint is selected.