IXFL70N60Q2

$18.88

Description：MOSFET N-CH 600V 37A ISOPLUS264
Series：HiPerFET™, Q2 Class
Mfr：IXYS
Package：Tube

SKU:fb6c162c1053 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFL70N60Q2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 600V 37A ISOPLUS264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFL70N60Q2

Description：MOSFET N-CH 600V 37A ISOPLUS264
Series：HiPerFET™, Q2 Class
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：92mOhm @ 35A, 10V
Vgs(th) (Max) @ Id：5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：265 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：12000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：ISOPLUS264™
Package / Case：TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for IXFL70N60Q2

IXFL70N60Q2

Single FETs, MOSFETs Overview

The IXFL70N60Q2 is a single N-channel enhancement mode MOSFET from the IXYS HiperFET Q-Class series. It features a 600 V drain-source voltage rating and a continuous drain current of 37 A at 25 °C. The device utilizes an ISOPLUS264 through-hole package with three pins. Key electrical parameters include a maximum on-resistance of 92 mΩ, a gate-source voltage range of ±30 V, and a power dissipation capacity of 360 W. Operating temperatures span from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

HiperFET Q-Class technology for optimized performance
Avalanche rated capability for robust operation
ISOPLUS264 through-hole mounting configuration

Single FETs, MOSFETs Applications

High-voltage switching applications
Power conversion circuits
Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official IXYS documentation before integration. Confirm that the ISOPLUS264 package dimensions match your PCB footprint requirements. Ensure thermal management solutions accommodate the specified 360 W power dissipation limits under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with through-hole mounting is required. The 600 V rating suits medium-to-high voltage designs. The 92 mΩ on-resistance balances conduction losses with switching characteristics suitable for general-purpose power electronics.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiperFET Q-Class family, designed for efficient power switching. The ISOPLUS264 package provides a robust mechanical connection for through-hole assembly, distinguishing it from surface-mount alternatives within the same voltage class.