IXFN100N10S3

Single FETs, MOSFETs Overview

The IXFN100N10S3 is a HiPerFET power MOSFET module featuring an integrated Schottky diode. It utilizes N-channel enhancement mode technology housed in a SOT-227B package. The device supports a drain-source voltage of 100 V and a continuous drain current of 100 A at case temperature. Key electrical characteristics include a maximum on-resistance of 15 mΩ and a typical forward voltage of 1.5 V for the integrated diode. Thermal performance is rated at 360 W power dissipation, with an operating temperature range spanning from -55°C to +175°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Integrates a fast-recovery Schottky diode within the MOSFET structure to minimize reverse recovery losses.
• Employs HiPerFET planar trench technology for low conduction and switching losses.
• Features a robust screw-mount SOT-227B package designed for high-power thermal management.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Motor drive inverters
• Uninterruptible power supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'S3' indicates the integrated Schottky diode configuration distinct from standard MOSFET variants. Confirm the manufacturer designation remains IXYS or Littelfuse following corporate acquisitions. Ensure the component matches the SOT-227B physical footprint and pinout requirements for your PCB layout before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring synchronous rectification or freewheeling capabilities without adding discrete diodes. The low on-resistance suits applications prioritizing efficiency under high load conditions. Evaluate thermal resistance parameters against your heatsinking strategy to ensure the 360 W dissipation rating is achievable in the target environment.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiPerFET family, which focuses on high-performance power switching solutions. The X-Class and Polar series represent broader portfolios, but this specific model targets general-purpose high-current switching. It complements other IXYS discrete semiconductors like the DK series rectifiers by offering combined switching and rectification in a single module.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative manufacturers based on matching voltage, current, and package specifications.