IXFN24N100F

Single FETs, MOSFETs Overview

The IXFN24N100F is a single N-channel power MOSFET module from the HiperFET series, manufactured by IXYS. It features a 1 kV drain-source breakdown voltage and a continuous drain current of 24 A. The device exhibits a maximum on-state resistance of 390 mΩ at a gate-source voltage of 10 V. It operates within a temperature range of -55°C to +150°C junction temperature and supports a power dissipation of 568 W. The component utilizes a SOT-227-4 package with screw mount installation.

Single FETs, MOSFETs Feature Summary

• HiperFET technology provides low on-state resistance and fast intrinsic diode characteristics for efficient hard switching and resonant mode applications.
• High-voltage capability up to 1 kV enables robust performance in high-power industrial environments.
• SOT-227-4 isolated package design facilitates secure panel mounting and effective thermal management.

Single FETs, MOSFETs Applications

• Industrial motor drives
• Switch-mode power supplies
• Resonant mode converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'F' against official datasheets to confirm packaging variations or tape-and-reel specifications if applicable. Ensure compatibility with existing thermal interface materials and mounting hardware requirements for the SOT-227-4 footprint. Cross-reference electrical parameters such as Rds(on) and Vgs thresholds with the latest manufacturer documentation to avoid discrepancies during integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation and moderate current handling in a compact module form factor. The HiperFET architecture offers improved ruggedness compared to standard MOSFETs. Consider the 390 mΩ on-resistance when calculating conduction losses and heat sink requirements for the intended operating duty cycle and ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiperFET family, which focuses on high-current, high-voltage power switching solutions. The series is engineered to eliminate the need for multiple parallel components through enhanced current handling capabilities. The IXFN24N100F represents a specific configuration within this lineup, balancing voltage rating and current capacity for general-purpose power electronics.

Single FETs, MOSFETs Replacement Considerations

The IXFE24N100F is a related variant within the same series. Verify pinout compatibility and thermal resistance differences before substitution. Check for any updates in the manufacturing line or RoHS compliance status between the two part numbers.