IXFN50N80Q2

Single FETs, MOSFETs Overview

The IXFN50N80Q2 is an N-channel enhancement-mode power MOSFET from the HiPerFET X2-Class series. It features a maximum drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 50 A at case temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 160 mΩ at Vgs=10 V. It is housed in a SOT-227B package with chassis mount installation, supporting a maximum power dissipation (Pd) of 1135 W. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 800 V breakdown rating for robust high-power switching
• Low on-state resistance optimized for reduced conduction losses
• Fast intrinsic diode characteristics suitable for resonant mode applications
• Enhanced ruggedness and high current handling within a single component

Single FETs, MOSFETs Applications

• Hard switching power supplies
• Resonant mode converters
• High-efficiency motor drives
• Industrial power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'Q2' against official Littelfuse/IXYS documentation to confirm it denotes the X2-Class performance tier rather than a generic variant. Ensure the procurement specification explicitly requires the SOT-227B chassis-mount package and 160 mΩ Rds(on) maximum limit to match the intended thermal and electrical design constraints.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation and significant current capacity in a single discrete module. The SOT-227B package necessitates direct chassis mounting for adequate heat dissipation. Compare total system cost against parallel low-voltage solutions to leverage the single-component current handling advantage and simplified gate drive requirements inherent to the HiPerFET architecture.

Single FETs, MOSFETs Part Context

This device belongs to the HiPerFET family, specifically the X2-Class expansion which offers improved efficiency metrics over previous generations. It serves as a high-performance alternative to standard industrial MOSFETs, targeting applications where size reduction and thermal management are critical constraints in power electronics design.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing PCB footprints or chassis mounting holes if considering alternative packages such as TO-247 variants.