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IXFX24N90Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 900V 24A PLUS247-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXFX24N90Q
- Description：MOSFET N-CH 900V 24A PLUS247-3
- Series：HiPerFET™, Q Class
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：450mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs：170 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PLUS247™-3
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for IXFX24N90Q
Single FETs, MOSFETs Overview
The IXFX24N90Q is a silicon N-channel enhancement mode power MOSFET from the HyperFET series, manufactured by IXYS. It features a TO-247-3 through-hole package with a drain-connected case. Key electrical parameters include a 900V drain-source breakdown voltage (Vds), a continuous drain current (Id) of 24A, and a maximum on-resistance (Rds(on)) of 0.45Ω. The device supports a gate-source voltage range of ±20V and operates within a temperature range of -55°C to +150°C. It has a power dissipation rating of 360W.
Single FETs, MOSFETs Feature Summary
- Utilizes IXYS HyperFET technology for optimized performance in high-voltage switching applications.
- Features a robust TO-247-3 through-hole package designed for efficient thermal management and reliable mounting.
Single FETs, MOSFETs Applications
- High-voltage DC-DC converters
- Motor control circuits
- Power supply units
Single FETs, MOSFETs Procurement Notes
Verify component authenticity and datasheet alignment before procurement. Confirm that the specific lot matches the required specifications. Note that this part may be subject to availability constraints or lifecycle changes. Ensure proper handling procedures are followed during storage and installation to maintain device integrity.
Single FETs, MOSFETs Selection Notes
Select this component when a 900V rating and 24A current capacity are required in a standard TO-247-3 package. Consider the 0.45Ω Rds(on) for conduction loss calculations. Evaluate thermal requirements against the 360W dissipation limit. Compare with other HyperFET variants if lower resistance or different packaging is needed.
Single FETs, MOSFETs Part Context
This part belongs to the IXYS HyperFET family, which focuses on high-voltage silicon MOSFETs. The IXFX series typically denotes specific pinout or packaging variations within the broader portfolio. It serves as a discrete solution for medium-power industrial and commercial electronics requiring high blocking voltages.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the IXYS IXFH or IXFK series with matching voltage and current ratings. Verify pin compatibility and thermal characteristics before substitution. Consult official replacement guides for end-of-life notifications.
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