ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 40A TO-263AA
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 20A
- Power - Max：150 W
- Switching Energy：150µJ (on), 700µJ (off)
- Input Type：Standard
- Gate Charge：90 nC
- Td (on/off) @ 25°C：15ns/150ns
- Test Condition：480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
Download product information
Overview
The IXGA20N60B is a HiPerFAST IGBT manufactured by IXYS. It features a collector-emitter breakdown voltage (VCES) of 600 V and a continuous collector current (IC) of 40 A at 25°C. The typical saturation voltage (VCE(sat)) is 1.7 V, with a typical fall time (tfi) of 100 ns. The device utilizes the HDMOSTM process for high current handling. It is available in standard JEDEC packages, including surface-mount TO-268 and through-hole TO-247 AD configurations.
Feature Summary
- HiPerFAST technology utilizing latest generation HDMOSTM process
- High current handling capability with 40 A rating
- Surface mountable design in standard JEDEC packages
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switched-mode and resonant-mode power supplies
Procurement Notes
Verify component authenticity against official IXYS documentation. Confirm package type matches design requirements, as variants exist for TO-268 and TO-247. Check RoHS compliance status via manufacturer datasheet. Ensure thermal management solutions align with the specified operating temperature range and power dissipation characteristics defined in the electrical specifications.
Selection Notes
Select this component for applications requiring 600 V blocking voltage and high current capacity. The 1.7 V typical saturation voltage supports efficient conduction. Consider the specific package variant (TO-268 vs TO-247) based on mounting constraints. The 100 ns fall time indicates suitability for high-frequency switching operations in power conversion circuits.
Part Context
This part belongs to the IXYS HiPerFAST IGBT family, designed for high-performance power switching. The series emphasizes space savings and high power density through advanced semiconductor processes. It serves as a core switching element in industrial and consumer power electronics, bridging the gap between traditional bipolar transistors and modern MOSFETs.
Replacement Considerations
Cross-reference with other HiPerFAST series devices from IXYS or equivalent 600 V/40 A IGBTs from other manufacturers. Verify pinout compatibility and thermal resistance values when substituting. Ensure replacement parts meet the same JEDEC package standards if mechanical fit is critical.
