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The IXGH20N60A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25°C. The device utilizes a TO-247AD-3 through-hole package with the case connected to the collector. Key electrical parameters include a gate-emitter threshold voltage of up to 7 V, a maximum gate-emitter voltage of ±20 V, and a power dissipation rating of 150 W. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with your design requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability may vary by region. Ensure proper handling procedures are followed due to electrostatic sensitivity.
Select this component when a 600 V rated IGBT with moderate current handling is required in a standard TO-247 package. Consider the 40 A continuous current limit and 150 W power dissipation under your specific thermal conditions. Evaluate the switching speed characteristics against your application's efficiency needs compared to faster or slower alternatives in the same voltage class.
This part belongs to the IXYS IXGH series of HiPerFAST IGBTs, designed for general-purpose high-power switching applications. The series offers a balance between conduction losses and switching speeds. The TO-247AD package is widely used in industrial electronics for its mechanical stability and ease of heatsinking.
Direct substitutes may include other 600 V, 40 A IGBTs in TO-247 packages from manufacturers like Infineon or Mitsubishi. Verify pinout compatibility, saturation voltage, and switching energy parameters before substitution. Cross-reference with IXYS internal equivalents if available.