IXGH25N120

Overview

The IXGH25N120 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. The device utilizes silicon technology and is housed in a TO-247AD three-pin through-hole package with the collector connected to the case. It operates within a temperature range of -55°C to +150°C junction temperature, with a maximum gate-emitter voltage rating of ±20 V.

Feature Summary

• High-speed switching capability for efficient power control
• Robust thermal management via direct case mounting
• Single-channel configuration for straightforward circuit integration

Applications

• Industrial motor drives
• Switch-mode power supplies
• Inverter circuits

Procurement Notes

Verify the specific suffix 'A' against the requested model, as the IXGH25N120A is listed as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors or secondary markets due to potential discontinuation status. Ensure the component matches the TO-247AD package and electrical specifications required for the design.

Selection Notes

Select this component for high-voltage applications requiring 1200V blocking capability and moderate current handling up to 50A. The TO-247AD package facilitates effective heat dissipation when mounted to a heatsink. Consider the NRND status for long-term production viability and evaluate alternative IGBTs from the same manufacturer if future supply stability is critical.

Part Context

This device belongs to the IXGH series of high-speed IGBTs designed for demanding power electronics applications. The series emphasizes fast switching characteristics combined with low conduction losses. The TO-247AD form factor is standard for medium-power discrete transistors, allowing compatibility with common PCB footprints and thermal interface solutions used in industrial equipment.