IXGK55N120A3H1

Overview

The IXGK55N120A3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 family, designed for high-power switching applications. It features a TO-264-3 through-hole package with an isolated case connection. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 55 A at 25°C. Key electrical parameters include a saturation voltage of 2.3 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 475 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• GenX3 technology providing optimized switching performance
• Isolated case construction for simplified mounting
• High short-circuit capability for robust operation

Applications

• Motor control drives
• Uninterruptible Power Supplies (UPS)
• Industrial inverters

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheets. Confirm RoHS compliance status via the specific supplier documentation. Ensure the TO-264-3 package dimensions match your PCB footprint requirements before finalizing orders.

Selection Notes

Select this IGBT for circuits requiring 1200V blocking voltage and moderate current handling up to 55A. Consider the 2.3V saturation voltage for thermal management calculations. Ensure the gate drive circuit accommodates the specified ±20V limits and that the heatsinking solution supports the 475W dissipation rating at the expected ambient temperature.

Part Context

This component belongs to the IXYS GenX3 series, which utilizes advanced trench gate technology to reduce switching losses compared to previous generations. The 'H1' suffix typically denotes a specific tape-and-reel or tube packaging variant compliant with specific environmental standards, distinct from standard bulk packaging.

Replacement Considerations

Direct replacements include the IXGK55N120A3 or IXGK55N120B3 from the same manufacturer. Verify pinout compatibility and thermal resistance values when substituting with devices from other vendors such as Infineon or Mitsubishi.