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Product Detailed Parameters
- Description：IGBT PT 1200V 40A TO-220-3
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：180 W
- Switching Energy：2.85mJ (on), 6.47mJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：16ns/290ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The IXGP20N120A3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 40 A. It operates within a temperature range from -55°C to +150°C, with a maximum power dissipation capability defined by its thermal characteristics. The component is part of the GenX3 family, designed for efficient switching applications.
Feature Summary
- GenX3 trench gate technology optimized for low conduction losses
- Square Reverse Bias Safe Operating Area (RBSOA)
- Low gate drive requirement for simplified circuit design
Applications
- Power inverters
- Uninterruptible Power Supplies (UPS)
- Motor drives
- Switching Mode Power Supplies (SMPS)
Procurement Notes
Verify the specific suffix against official datasheets, as variations such as 'B' or 'A3' may indicate differences in packaging, lead frame material, or specific electrical tolerances. Confirm RoHS compliance status directly with the manufacturer documentation before integration into regulated assemblies.
Selection Notes
Select this component for designs requiring 1200V blocking capability with moderate current handling up to 40A. Ensure the thermal management solution supports the power dissipation limits specified in the datasheet for the TO-220-3 package. Verify that the gate drive voltage aligns with the standard ±20V rating for reliable switching performance.
Part Context
This IGBT belongs to the IXYS GenX3 product line, which incorporates advanced trench gate technology to enhance switching efficiency and reduce conduction losses compared to previous generations. The series is engineered for high-power density applications where thermal performance and robustness are critical requirements.
Replacement Considerations
Cross-reference with other IXYS GenX3 devices in the same voltage class, such as the IXGP20N120B, ensuring pinout compatibility and checking if parameter deviations in saturation voltage or switching times meet the specific application constraints.
