ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 1200V 40A TO-220-3
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 20A
- Power - Max：190 W
- Switching Energy：2.1mJ (off)
- Input Type：Standard
- Gate Charge：72 nC
- Td (on/off) @ 25°C：25ns/150ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
Download product information
Overview
The IXGP20N120B is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a TO-220-3 through-hole package and operates with a maximum collector-emitter voltage of 1.2 kV. The device supports a continuous collector current of 40 A and handles a gate-emitter voltage range from -20 V to +20 V. It functions within an ambient temperature range of -55°C to +150°C. The component utilizes standard silicon technology for high-voltage switching applications.
Feature Summary
- Single configuration IGBT design for discrete switching circuits
- High voltage capability rated at 1.2 kV collector-emitter breakdown
- Through-hole mounting in a TO-220-3 package for board integration
Applications
- Industrial motor drive inverters
- Switched-mode power supplies
- High-voltage DC-DC converters
Procurement Notes
Verify the specific manufacturing lot date code against project requirements, as production cycles may vary. Confirm RoHS compliance status via the official datasheet before finalizing procurement, as environmental declarations can be subject to revision. Ensure the ordering quantity aligns with the manufacturer's tube packaging specifications to avoid partial reel issues.
Selection Notes
Select this component when a 1.2 kV rating and 40 A continuous current capacity are required in a TO-220-3 form factor. Evaluate thermal management needs based on the specified operating temperature limits up to 150°C. Compare saturation voltage characteristics against alternative IGBTs in the same voltage class to ensure compatibility with existing gate drive voltages and efficiency targets.
Part Context
This part belongs to the IXYS IXGP series of general-purpose IGBTs. These devices are designed for medium-power applications requiring robust high-voltage switching. The series typically offers a balance between conduction losses and switching speed, suitable for industrial and consumer electronics where reliable performance under high electrical stress is critical.
Replacement Considerations
Direct pin-compatible replacements should maintain the 1.2 kV VCEO and 40 A Ic ratings in a TO-220-3 package. Verify that any substitute matches the gate-emitter threshold and saturation voltage profiles to ensure proper driver interface. Cross-reference with other IXYS models like the IXGT series if higher current density or different packaging is acceptable.
