ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT PT 600V 60A TO-220-3
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 20A
- Power - Max：220 W
- Switching Energy：270µJ (on), 90µJ (off)
- Input Type：Standard
- Gate Charge：38 nC
- Td (on/off) @ 25°C：16ns/42ns
- Test Condition：300V, 20A, 5Ohm, 15V
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
Download product information
Overview
The IXGP30N60C3D4 is a GenX3 series insulated gate bipolar transistor (IGBT) with an integrated anti-parallel diode, manufactured by IXYS. It utilizes silicon technology and features a TO-247AD-4 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600V and a continuous collector current of 30A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.9V and a forward voltage of the integrated diode at 2.5V. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Integrates a fast recovery anti-parallel diode with the IGBT chip for simplified circuit design
- Utilizes IXYS GenX3 trench gate technology to optimize switching performance and conduction losses
- Features a robust TO-247AD-4 package designed for high-power thermal management applications
Applications
- Induction heating systems
- Switched-mode power supplies (SMPS)
- Motor drive inverters
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified partners. Confirm RoHS compliance status and specific manufacturing date codes against the latest datasheet revisions. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues prior to soldering.
Selection Notes
Select this component for applications requiring combined switching and freewheeling functions in a single package. Consider the thermal resistance characteristics of the TO-247AD-4 package for heat sink design. Evaluate the trade-off between the 1.9V saturation voltage and switching speed relative to system efficiency requirements.
Part Context
This part belongs to the IXYS GenX3 family of power semiconductors, which are engineered for high-efficiency power conversion. The GenX3 line represents an evolution in trench gate IGBT technology, offering improved ruggedness and lower on-state losses compared to earlier planar designs, suitable for demanding industrial power electronics.
Replacement Considerations
Direct pin-compatible replacements may include other IXYS GenX3 devices with similar voltage and current ratings, such as the IXGP30N60C3D1, provided thermal and electrical characteristics align with the original design specifications.
