IXGR12N60C

Overview

The IXGR12N60C is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 12A at 25°C. The device utilizes XPT technology to achieve low saturation voltage characteristics, making it suitable for high-efficiency switching applications. It is housed in a TO-247AD package with three pins and supports through-hole mounting. The component operates within a junction temperature range from -55°C to +150°C.

Feature Summary

• XPT technology for optimized switching performance
• Low saturation voltage for reduced conduction losses
• High thermal stability up to 150°C junction temperature

Applications

• Switch-mode power supplies
• Motor control inverters
• Induction heating systems

Procurement Notes

Verify the specific manufacturer datasheet for the IXGR12N60C to confirm current production status and exact electrical tolerances. Cross-reference pinout configurations with the TO-247AD standard before integration. Ensure compatibility with existing gate drive requirements regarding voltage levels and switching speeds.

Selection Notes

Select this component when a 600V rated IGBT with moderate current handling is required. Compare its saturation voltage against alternatives if efficiency is critical. Verify that the TO-247AD package fits the thermal management design constraints of the target application board layout.

Part Context

This part belongs to the IXYS IXGR series of XPT IGBTs. These devices are designed for medium-frequency switching applications. The series typically includes complementary diodes or other current ratings within the same voltage class for modular designs.

Replacement Considerations

Check for direct replacements within the IXYS IXGH or IXGT series that share the TO-247AD package and 600V rating. Verify pin compatibility and thermal resistance values before substituting with parts from other manufacturers.