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Product Detailed Parameters
- Description：IGBT 1200V 54A ISOPLUS247
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：54 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 35A
- Power - Max：250 W
- Switching Energy：900µJ (on), 3.8mJ (off)
- Input Type：Standard
- Gate Charge：140 nC
- Td (on/off) @ 25°C：40ns/270ns
- Test Condition：960V, 35A, 3Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：ISOPLUS247™
- Grade：-
- Qualification：-
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Overview
The IXGR35N120BD1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a single N-channel configuration housed in a TO-247AD through-hole package. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 35 A at 25°C. Key electrical parameters include a saturation voltage of 2.6 V, a turn-off time of 190 ns, and a power dissipation rating of 300 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrated fast recovery anti-parallel diode for efficient switching applications
- Short-circuit safe operating area capability for robust protection
- High voltage blocking performance suitable for demanding power environments
Applications
- AC motor speed control systems
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify the specific suffix BD1 against official datasheets to confirm the inclusion of the integrated diode and pinout configuration. Ensure thermal management solutions align with the 300 W power dissipation rating. Confirm RoHS compliance status as per the latest manufacturer documentation before finalizing procurement orders.
Selection Notes
Select this component for high-voltage switching applications requiring integrated freewheeling diodes. Compare the 1200 V rating and 35 A current capacity against system requirements. Evaluate the 2.6 V saturation voltage for conduction loss optimization. Consider the TO-247AD package for through-hole mounting constraints and thermal performance needs.
Part Context
This IGBT belongs to the IXYS High Voltage IGBT family designed for industrial power conversion. It utilizes silicon technology to provide reliable performance in medium-power applications. The component is part of a broader portfolio of discrete power semiconductors used in energy conversion and motor control sectors.
Replacement Considerations
Cross-reference with other IXYS models such as IXSK35N120BD1 or IXSX35N120AU1 for functional compatibility. Verify pinout alignment and electrical parameter equivalence before substitution. Consult official replacement guides to ensure no design modifications are required.
FAQ
Does the IXGR35N120BD1 include an integrated diode?
Yes, the device features a built-in fast recovery anti-parallel diode.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage is rated at 1200 V.
Is short-circuit protection supported?
Yes, the component offers short-circuit safe operating area capability.
