IXGT28N60B

Description：IGBT 600V 40A TO-268AA
Series：-

SKU:cdec7d258201 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 40A TO-268AA
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：80 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 28A
Power - Max：150 W
Switching Energy：2mJ (off)
Input Type：Standard
Gate Charge：68 nC
Td (on/off) @ 25°C：15ns/175ns
Test Condition：480V, 28A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：TO-268AA
Grade：-
Qualification：-

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IXGT28N60B

Overview

The IXGT28N60B is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 40 A at 25°C. The device operates within a junction temperature range of -55°C to 150°C and utilizes a TO-268AA surface-mount package. Key electrical characteristics include a maximum saturation voltage of 2V at 15V gate drive and 28A collector current, with a typical switching time of 175ns for turn-off.

Feature Summary

Standard input type configuration for general-purpose switching applications
Surface-mount construction in a TO-268AA package for automated assembly
Rated for high-temperature operation up to 150°C junction temperature

Applications

Motor control systems
Power supply circuits
Inverter designs

Procurement Notes

Verify component authenticity through authorized distributors due to potential availability constraints. Confirm the specific suffix designation matches project requirements, as variations may exist. Review the latest datasheet for any updates regarding pinout or thermal characteristics before finalizing the design.

Selection Notes

Select this component for applications requiring a 600V rated IGBT in a compact surface-mount form factor. Ensure the driving circuit can provide the necessary gate charge and that the thermal management solution supports the specified power dissipation limits under expected operating conditions.

Part Context

This part belongs to the IXYS IGBT portfolio, designed for medium-power switching tasks. It serves as a discrete semiconductor solution for converting electrical energy efficiently in various industrial and consumer electronics applications requiring robust voltage handling capabilities.

Replacement Considerations

Direct substitutes include the IXGT30N120B3D1. Similar alternatives from other manufacturers, such as STMicroelectronics models, are available but require verification of pin compatibility and electrical parameter alignment.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.