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IXHH40N150HV
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Product Detailed Parameters
- Description：SCR 1.5KV 40A TO247HV
- Series：-
- Mfr：IXYS
- Package：Tube
- Voltage - Off State：1.5 kV
- Voltage - Gate Trigger (Vgt) (Max)：-
- Current - Gate Trigger (Igt) (Max)：-
- Current - Hold (Ih) (Max)：-
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- SCR Type：Standard Recovery
- Operating Temperature：-55°C ~ 150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：TO-247HV
- Voltage - On State (Vtm) (Max)：-
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Off State (Max)：-
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Overview
The IXHH40N150HV is a high-voltage N-channel power MOSFET manufactured by IXYS. It features a planar gate technology designed for high-speed switching applications with low on-state resistance. The device is housed in an insulated TO-247 package, providing robust thermal performance and electrical isolation. Key electrical characteristics include a drain-source voltage rating of 1500V and a continuous drain current of 40A at 25°C case temperature. The component exhibits low gate charge and fast switching times, making it suitable for hard-switching topologies.
Feature Summary
- Planar gate technology for optimized switching performance
- Insulated TO-247 package for enhanced thermal management
- Low on-resistance for reduced conduction losses
- High breakdown voltage capability for demanding applications
Applications
- High-frequency DC-DC converters
- Induction heating systems
- Uninterruptible power supplies (UPS)
- Motor drive inverters
Procurement Notes
Verify the specific ordering suffix to ensure the correct pinout and packaging variant matches the design requirements. Confirm that the datasheet version aligns with the manufacturing batch for accurate thermal and electrical parameters. Check for any regional compliance certifications required for the target market.
Selection Notes
Select this component when high voltage isolation and moderate current handling are required in a single-ended configuration. Evaluate the thermal resistance of the heatsink interface to ensure the junction temperature remains within safe operating limits under peak load conditions. Consider the gate drive voltage compatibility with the control circuitry.
Part Context
This part belongs to IXYS' high-voltage MOSFET portfolio, specifically engineered for industrial power conversion. It complements lower voltage devices by offering superior blocking capabilities while maintaining competitive switching speeds. The series is commonly integrated into medium-power inverter stages where reliability under high stress is critical.
Replacement Considerations
Direct substitutes must match the 1500V rating, 40A current capacity, and TO-247 insulation class. Verify pin compatibility and thermal resistance values before substitution. Cross-reference with other manufacturers' high-voltage planar gate MOSFETs ensuring identical package dimensions and electrical thresholds.
