IXTA50N25T

Single FETs, MOSFETs Overview

The Littelfuse IXTA50N25T is an N-Channel Trench Gate Power MOSFET manufactured by IXYS. It features a TO-263 (D2PAK) surface-mount package with a drain tab connection. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 250 V and a continuous drain current (ID25) of 50 A at 25°C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 60 mΩ at VGS = 10V. It supports a pulsed drain current (IDM) of 130 A and has a power dissipation rating of 400 W. The junction temperature range spans from -55°C to +150°C, with a storage temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Avalanche rated for robust energy handling capabilities
• Low on-state resistance for efficient conduction
• Fast intrinsic body rectifier for high-speed switching
• High current handling capability within a compact surface-mount form factor

Single FETs, MOSFETs Applications

• DC-DC converters
• Battery chargers
• Switch-mode and resonant-mode power supplies
• DC choppers
• AC and DC motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TRL' if ordering via distributors like Mouser, as it indicates tape-and-reel packaging, whereas the base datasheet refers to the component generally. Confirm RoHS compliance status through official Littelfuse declarations. Ensure thermal management design accounts for the specified RthJC values. Validate that the application voltage and current limits remain within the absolute maximum ratings defined in the datasheet to prevent device failure.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high power density and efficient switching in the 250V class. The low RDS(on) minimizes conduction losses, while the avalanche rating provides resilience against inductive load transients. Consider the TO-263 package for surface-mount assembly benefits. Evaluate thermal performance based on the required case temperature and power dissipation constraints. Compare gate charge characteristics against drive circuit capabilities for optimal switching speed control.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS IXT series of N-Channel Trench Gate Power MOSFETs, which includes variants such as IXTQ50N25T (TO-3P), IXTP50N25T (TO-220AB), and IXTH50N25T (TO-247). These devices share similar electrical characteristics but differ in physical package dimensions and mounting styles. The series is designed for general-purpose power switching applications where reliability and efficiency are critical.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same family include IXTQ50N25T, IXTP50N25T, and IXTH50N25T, depending on the required package type. Cross-brand replacements must match the 250V BVDSS, 50A ID, and 60mΩ RDS(on) specifications. Verify that any substitute maintains comparable avalanche energy ratings and thermal resistance characteristics.